040N06N Transistor - N-MOSFET 60V 90A 188W (TO220)
Varenr:
H65650
EAN:
5705412656504
INFINEON TECHNOLOGIES IPP040N06N3GXKSA1 er en N-kanals MOSFET-transistor med OptiMOS 3-teknologi, egnet til højstrømsanvendelser. Den har en drain-kilde spænding på 60V, en drain-strøm på 90A og en effektdissipation på 188W.
Tekniske detaljer:
- Fabrikant: INFINEON TECHNOLOGIES
- Transistortype: N-MOSFET
- Teknologi: OptiMOS 3
- Polarisering: unipolar
- Drain-kilde spænding: 60V
- Drain-strøm: 90A
- Effektdissipation: 188W
- Beholder: PG-TO220-3
- Gate-kilde spænding: ±20V
- Tillandsresistans: 4m?
- Monteringsmetode: THT
- Kanaltype: forbedring
INFINEON TECHNOLOGIES IPP040N06N3GXKSA1 is an N-channel MOSFET transistor with OptiMOS 3 technology, suitable for high-current applications. It has a drain-source voltage of 60V, a drain current of 90A and a power dissipation of 188W.
Specifications:
- Manufacturer: INFINEON TECHNOLOGIES
- Type of transistor: N-MOSFET
- Technology: OptiMOS 3
- Polarisation: unipolar
- Drain-source voltage: 60V
- Drain current: 90A
- Power dissipation: 188W
- Case: PG-TO220-3
- Gate-source voltage: ±20V
- On-state resistance: 4m?
- Mounting: THT
- Kind of channel: enhancement
